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  this is information on a product in full production. april 2012 doc id 022134 rev 2 1/10 10 T1620T-8I, t1635t-8i snubberless? 16 a triac datasheet ? production data features high static and dynamic commutation three quadrants snubberless device package is rohs (2002/95/ec) compliant tab insulated, voltage = 2500 v rms ul certified (ref. file e81734) applications general purpose ac line load switching home appliances: ?fan ?pump ? solenoid lighting heaters inrush current limiting circuits overvoltage crowbar protection circuits description available in to220ab-ins . (ceramic insulated), the T1620T-8I, and t1635t-8i triacs can be used as on/off or phase angle function controllers in general purpose ac switching. these devices can be used without snubber (r + c networks) if the datasheet limits are respected. provides insulation rated at 2500 v rms (to- 220ab insulated package). tm: snubberless is a tradem ark of stmicroelectronics table 1. device summary order code quadrants value i gt (ma) T1620T-8I i - ii - iii 20 t1635t-8i i - ii - iii 35 to-220ab insulated (t1620t-8l t1635t-8l) g a2 a1 a2 a1 g www.st.com
characteristics T1620T-8I, t1635t-8i 2/10 doc id 022134 rev 2 1 characteristics table 2. absolute maximum rating (t j = 25 c, unless otherwise specified) symbol parameter value unit i t(rms) on-state rms current (full sine wave) t c = 108 c 16 a t c = 119 c 12 i tsm non repetitive surge peak on-state current (full cycle, t j initial = 25 c) f = 50 hz t p = 20 ms 120 a f = 60 hz t p = 16.7 ms 126 i 2 ti 2 t value for fusing t p = 10 ms 95 a 2 s v drm / v rrm repetitive peak off-state voltage, gate open t j = 150 c 600 v t j = 125 c 800 v dsm , v rsm non repetitive surge peak off-state voltage t p = 10 ms t j = 25 c 900 v di/dt critical rate of rise of on-state current i g = 2 x i gt f = 100 hz 100 a/s i gm peak gate current t p = 20 s t j = 150 c 4 a p g(av) average gate power dissipation t j = 150 c 1 w t stg t j storage junction temperature range operating junction temperature range -40 to +150 -40 to +150 c t l lead temperature for soldering during 10 s (at 4 mm from case for to220ab-ins.) 260 c v ins (rms) insulation rms voltage, 1 minute, to220ab ceramic insulated 2500 v
T1620T-8I, t1635t-8i characteristics doc id 022134 rev 2 3/10 table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions quadrant value unit t1620t t1635t i gt (1) v d = 12 v, r l = 30 i - ii - iii min. 1 1.75 ma i - ii - iii max. 20 35 ma v gt v d = 12 v, rl = 30 all max. 1.3 v v gd v d = 800 v, r l = 3.3 k , t j = 125 c all min. 0.2 v i h (1) i t = 500 ma max. 25 45 ma i l i g = 1.2 i gt i - iii max. 35 55 ma ii 40 65 dv/dt (1) v d = 67% x 800 v gate open t j = 125 c min. 1000 2000 v/s v d = 67% x 600 v gate open t j = 150 c 500 1000 (dl/dt)c (1) (dv/dt)c = snubberless (> 20 v/s) t j = 125 c min. 616 a/ms t j = 150 c 4.5 12 t gt gate controlled turn on time i tm = 13 a, v d = 400 v, i g = 100 ma, di g /dt = 100 ma/s, r l = 30 i - ii - iii typ. 2 s 1. for both polarities of a2 referenced to a1 table 4. static characteristics symbol test conditions value unit v tm (1) i tm = 22.6 a, t p = 380 s t j = 25 c max. 1.55 v v to (1) threshold voltage t j = 150 c max. 0.85 v r d (1) dynamic resistance t j = 150 c max. 30 m i drm i rrm v drm = v rrm = 800 v t j = 25 c max. 5a t j = 125 c 1 ma v drm = v rrm = 600 v t j = 150 c 3.6 1. for both polarities of a2 referenced to a1 table 5. thermal resistance symbol parameter value unit r th(j-c) junction to case (ac) 2.1 c/w r th(j-a) junction to ambient 60 c/w
characteristics T1620T-8I, t1635t-8i 4/10 doc id 022134 rev 2 figure 1. maximum power dissipation versus on-state rms current (full cycle) figure 2. on-state rms current versus case temperature (full cycle) 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10121416 180 i (a) t(rms) p(w) 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 i (a) t(rms) t (c) c figure 3. on-state rms current versus ambient temperature (free air convection) figure 4. relative variation of thermal impedance versus pulse duration 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 t (c) a i (a) t(rms) 1.0e-02 1.0e-01 1.0e+00 k = [z / r ] th th 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 z th(j-c) z th(j-a) t (s) p figure 5. on-state characteristics (maximum values) figure 6. surge peak on-state current versus number of cycles 1 10 100 1000 012345 i (a) tm v (v) tm t max: v = 0.85 v r = 30 m j to d t = 150 c j t = 25 c j 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1 10 100 1000 number of cycles i (a) tsm one cycle t = 20 ms repetitive t = 108 c c non repetitive t initial = 25 c j
T1620T-8I, t1635t-8i characteristics doc id 022134 rev 2 5/10 figure 7. non repetitive surge peak on-state current and corresponding values of i 2 t figure 8. relative variation of gate trigger current versus junction temperature 10 100 1000 10000 0.01 0.10 1.00 10.00 i (a), i2t (a2s) tsm t (ms) p dl /dt limitation: 100 a / s sinusoidal pulse with width t <10 ms p t initial = 25 c j i2t i tsm 0.0 0.5 1.0 1.5 2.0 -50 -30 -10 10 30 50 70 90 110 130 150 typical values t (c) j i [t ]/i [t = 25 c] gt j gt j 3q i q1-q2 gt 3q i q3 gt figure 9. relative variation of gate trigger voltage versus junction temperature figure 10. relative variation of holding current and latching current versus junction temperature 0.0 0.5 1.0 1.5 -50 -30 -10 10 30 50 70 90 110 130 150 t (c) j v [t ] / v [t = 25 c] gt j gt j typical values 3q v gt 0.0 0.5 1.0 1.5 2.0 -50 -30 -10 10 30 50 70 90 110 130 150 typical values i , [t ] / i , i [t = 25 c] hjhlj i l t (c) j i l i h figure 11. relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dv/dt)c figure 12. relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature 0 1 2 3 4 0.1 1.0 10.0 100.0 (di/dt)c[(dv/dt) ]/specified(di/dt) cc (dv/dt) (v/s) c typical values (dl / dt) [t ] / [t = 150 c] jj (dl / dt) cc 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 typical values t (c) j
characteristics T1620T-8I, t1635t-8i 6/10 doc id 022134 rev 2 figure 13. relative variation of leakage current versus junction temperature for different values of blocking voltage 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 25 50 75 100 125 150 t (c) j i/i[t;v/v] / i/i drm rrm j drm rrm drm rrm v = v = 800 v drm rrm v = v = 600 v drm rrm v = v = 400 v drm rrm [t = 125 c; 800 v]; [t = 150 c; 600 v] j j
T1620T-8I, t1635t-8i package information doc id 022134 rev 2 7/10 2 package information epoxy meets ul94, v0 recommended torque value: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. to-220ab insulated dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 ?i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m2.60 0.102 c b2 c2 f ? i l a a1 a2 b e b1 i4 l3 l2 c1 m
ordering information scheme T1620T-8I, t1635t-8i 8/10 doc id 022134 rev 2 3 ordering information scheme figure 14. ordering information scheme t16 xx t - 8i current 16 = 16 ampere sensitivity 20 = 20 ma 35 = 35 ma specific application voltage 8 = 800 v package i = to220ab-insulated triac series
T1620T-8I, t1635t-8i ordering information doc id 022134 rev 2 9/10 4 ordering information 5 revision history table 7. ordering information order code marking package weight base qty delivery mode T1620T-8I T1620T-8I to-220ab insulated 2.3 50 tube t1635t-8i t1635t-8i to-220ab insulated 2.3 50 tube table 8. document revision history date revision changes 20-jan-2012 1 first issue. 25-apr-2012 2 updated ul certification.
T1620T-8I, t1635t-8i 10/10 doc id 022134 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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